본문바로가기

Publications

Prof. Zonghoon Lee’s Atomic-Scale Electron Microscopy Lab

Publications

Link to Google Scholar


Publications in Nature | Science | their sister journals


Nature, 596, 519-524, 2021 Nature, 582, 511-514, 2020 / Nature Nanotechnology, 15, 289-295, 2020 / Nature Nanotechnology, 15, 59-66, 2020 / Science Advances, 6 (10), eaay4958, 2020 / Nature Electronics, 3, 207-215, 2020 / Nature Communications, 11 (1437), 2020 / Nature Energy, 3, 773-782, 2018 / Nature Communications, 8:1549, 2017 / Nature Communications, 6:8294, 2015 / Nature Communications, 6:7817, 2015 / Nature Communications, 5:3383, 2014




Abstract


 Plasma-enhanced atomic layer deposition (PE-ALD) has many advantages for the deposition of thin films. However, an appropriate control of the plasma frequency in the PE-ALD process is required to reduce the plasma-induced damage of the thin films during deposition. In this study, we comparatively studied the effects of conventional 13.56 MHz, radio frequency (RF) and 60 MHz, very high frequency (VHF) plasma reactants in the PE-ALD during the deposition of Al2O3. The plasma damage and the degree of strain of the substrate are investigated by transmission electron microscopy at the atomic scale. In addition, a correlation between the atomic structure and plasma damage at RF and VHF is suggested. Compared to the RF PE-ALD, Al2O3 thin films deposited with VHF PE-ALD show a clearly effective reduction of the plasma-induced damage. Moreover, the Al2O3 thin films are grown into a tetrahedral structure near the surface and are then further grown into an octahedral structure, indicating the presence of an increased number of ions and radicals during the plasma-enhanced process. It is evident that the VHF PE-ALD is a more important deposition process for reducing plasma-induced damage to thin films than its RF counterpart.

2021

2020

2019

2018

2017

2016

2015

2014

2013

2012

2011

Prior to Joining UNIST, 2011

TOP