본문바로가기

Publications

Prof. Zonghoon Lee’s Atomic-Scale Electron Microscopy Lab

Publications

Link to Google Scholar


Publications in Nature | Science | their sister journals


Nature, 596, 519-524, 2021 Nature, 582, 511-514, 2020 / Nature Nanotechnology, 15, 289-295, 2020 / Nature Nanotechnology, 15, 59-66, 2020 / Science Advances, 6 (10), eaay4958, 2020 / Nature Electronics, 3, 207-215, 2020 / Nature Communications, 11 (1437), 2020 / Nature Energy, 3, 773-782, 2018 / Nature Communications, 8:1549, 2017 / Nature Communications, 6:8294, 2015 / Nature Communications, 6:7817, 2015 / Nature Communications, 5:3383, 2014




Abstract


 We found that the interfacial compressive stress induced by the shrinkage of the Cu–Ni(111) foil substrate from the growth temperature down to 1,030 K was entirely released by the formation of folds. It is the sudden formation of bunched steps at a temperature (or small temperature range) between 1,030 K and 1,040 K that causes the folds. In a growth temperature range between 1,000 K and 1,030 K, large-area, fold-free, single-crystal single layer graphene films were produced on single-crystal Cu–Ni(111) alloy foils (20.0 at% Ni) using ethylene as the carbon precursor. This film shows uniform GFET performance over the entire area as a result of the absence of folds, grain boundaries and adlayers, and has an average room-temperature carrier mobility of around 7.0 × 10​3 cm​2 V​-1 s​-1 for both holes and electrons. These carrier mobilities are comparable to those for single crystal graphene grown at temperatures above 1,270 K. The large-area fold-free film allows the straightforward fabrication of integrated high-performance devices oriented in any direction over the entire film. With the absence of folds and the possibility of also removing ripples (for instance, through the wax transfer method), these single-crystal graphene films could play an important role in experiments and applications that depend on stacking ‘perfect’ layers.

2021

2020

2019

2018

2017

2016

2015

2014

2013

2012

2011

Prior to Joining UNIST, 2011

TOP