Research
Prof. Zonghoon Lee’s Atomic-Scale Electron Microscopy Lab
Research
Abstract
The production of holes by electron beam irradiation in hexagonal boron nitride (hBN), which has a lattice similar to that of graphene, is monitored over time using atomic resolution transmission electron microscopy. The holes appear to be initiated by the formation of a vacancy of boron and grow in a manner that retains an overall triangular shape. The hole growth process involves the formation of single chains of B and N atoms and is accompanied by the ejection of atoms and bundles of atoms along the hole edges, as well as atom migration. These observations are compared to density functional theory calculations and molecular dynamics simulations.
관련링크
Research fields
Our research focuses on atomic-scale characterization, design, and synthesis as well as the properties of advanced materials including 2D materials, carbon materials, and soft matter by means of aberration-corrected transmission electron microscopy and spectroscopy. In situ experiments at both the atomic and nano scales are implemented for our study.
Advanced TEM CharacterizationAtomic-Scale Defects Study
In Situ TEM Characterization: mechanical, thermal, and electrical experiments
In Situ Gas/Liquid Phase TEM Experiments
Research highlights
Journal covers & artworks
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Atomic-scale dynamics of triangular hole growth in monolayer hexagonal boron nitride under electron irradiation -
One-dimensional hexagonal boron nitride conducting channel -
Grain Boundary Mapping in Polycrystalline Graphene -
Double-Spiral Hexagonal Boron Nitride and Shear Strained Coalescence Boundary -
Hole defects on 2D materials formed by electron beam irradiation: toward nanopore devices -
Atomic resolution imaging of rotated bilayer graphene sheets using a low kV aberration- corrected TEM -
Atomic Scale Study on Growth and Heteroepitaxy of ZnO Monolayer on Graphene -
In situ STEM study of MoS2 formation on graphene with deep-learning framework -
Anisotropic Angstrom-Wide Conductive Channels in Black Phosphorous by Top-down Cu Intercalation -
Quantitative Evaluation of Dislocation Density in Epitaxial GaAs Layer on Si Using Transmission Electron Microscopy -
Antiphase boundaires as faceted metallic wires in two-dimensional transition metal dichalcogenides -
Direct Imaging of Soft−Hard Interfaces Enabled by Graphene -
van der Waals epitaxial formation of atomic layered α-MoO3 on MoS2 by oxidation