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Publications

Prof. Zonghoon Lee’s Atomic-Scale Electron Microscopy Lab

Publications

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Publications in Nature | Science | their sister journals


Nature, 582, 511-514, 2020 / Nature Nanotechnology, 15, 289-295, 2020 / Nature Nanotechnology, 15, 59-66, 2020 / Science Advances, 6 (10), eaay4958, 2020 / Nature Electronics, 3, 207-215, 2020 / Nature Communications, 11 (1437), 2020 / Nature Energy, 3, 773-782, 2018 / Nature Communications, 8:1549, 2017 / Nature Communications, 6:8294, 2015 / Nature Communications, 6:7817, 2015 / Nature Communications, 5:3383, 2014




Abstract


 The interest in layered materials is largely based on the expectation that they will be beneficial for a variety of applications, from low-power-consuming, wearable electronics to energy harvesting. However, the properties of layered materials are highly dependent on thickness, and the difficulty of controlling thickness over a large area has been a bottleneck for commercial applications. Here, we report layer-by-layer growth of SnSe2, a layered semiconducting material, via van der Waals epitaxy. The films were fabricated on insulating mica substrates with substrate temperatures in the range of 210 °C–370 °C. The surface consists of a mixture of N and (N ± 1) layers, showing that the thickness of the film can be defined with monolayer accuracy (±0.6 nm). High-resolution transmission electron microscopy reveals a polycrystalline film with a grain size of ~100 nm and clear Moiré patterns from overlapped grains with similar thickness. We also report field effect mobility values of 3.7 cm2 V−1 s−1 and 6.7 cm2 V−1 s−1 for 11 and 22 nm thick SnSe2, respectively. SnSe2 films with customizable thickness can provide valuable platforms for industry and academic researchers to fully exploit the potential of layered materials.

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2011

Prior to Joining UNIST, 2011

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