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Publications

Prof. Zonghoon Lee’s Atomic-Scale Electron Microscopy Lab

Publications

Link to Google Scholar


Publications in Nature | Science | their sister journals


Nature, 582, 511-514, 2020 / Nature Nanotechnology, 15, 289-295, 2020 / Nature Nanotechnology, 15, 59-66, 2020 / Science Advances, 6 (10), eaay4958, 2020 / Nature Electronics, 3, 207-215, 2020 / Nature Communications, 11 (1437), 2020 / Nature Energy, 3, 773-782, 2018 / Nature Communications, 8:1549, 2017 / Nature Communications, 6:8294, 2015 / Nature Communications, 6:7817, 2015 / Nature Communications, 5:3383, 2014




Abstract


 Van der Waals (vdW) epitaxy allows the fabrication of various heterostructures with dramatically released lattice matching conditions. This study demonstrates interface‐driven stacking boundaries in WS​2 using epitaxially grown tungsten disulfide (WS​2) on wrinkled graphene. Graphene wrinkles function as highly reactive nucleation sites on WS​2 epilayers; however, they impede lateral growth and induce additional stress in the epilayer due to anisotropic friction. Moreover, partial dislocation‐driven in‐plane strain facilitates out‐of‐plane buckling with a height of 1 nm to release in‐plane strain. Remarkably, in‐plane strain relaxation at partial dislocations restores the bandgap to that of monolayer WS​2 due to reduced interlayer interaction. These findings clarify significant substrate morphology effects even in vdW epitaxy and are potentially useful for various applications involving modifying optical and electronic properties by manipulating extended 1D defects via substrate morphology control.

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2011

Prior to Joining UNIST, 2011

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